vs-80cpq020pbf, vs-80CPQ020-N3 www.vishay.com vishay semiconductors revision: 31-aug-11 1 document number: 94256 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 schottky rectifier, 2 x 40 a features ? 150 c t j operation ? optimized for 3.3 v application ? ultralow forward voltage drop ? high frequency operation ? guard ring for enhanced ruggedness and long term reliability ? high purity, high temperature epoxy encapsulation for enhanced mechanical strength and mois ture resistance ? compliant to rohs directive 2002/95/ec ? designed and qualified according to jedec-jesd47 ? halogen-free according to iec 61249-2-21 definition (-n3 only) description this center tap schottky rect ifier has been optimized for ultralow forward voltage drop specifically for 3.3 v output power supplies. the proprietary barrier technology allows for reliable operation up to 150 c junction temperature. typical applications are in pa rallel switching power supplies, converters, reverse battery protection, and redundant power subsystems. product summary package to-247ac i f(av) 2 x 40 a v r 20 v v f at i f 0.36 v i rm max. 1100 ma at 125 c t j max. 150 c diode variation common cathode e as 27 mj base common cathode common cathode 2 2 13 anode 1 anode 2 to-247ac major ratings and characteristics symbol characteristics values units i f(av) rectangular waveform 80 a v rrm 20 v i fsm t p = 5 s sine 2200 a v f 40 apk, t j = 150 c (per leg) 0.32 v t j range - 55 to 150 c voltage ratings parameter symbol vs-80cpq020pbf vs-80CPQ020-N3 units maximum dc reverse voltage v r 20 20 v maximum working peak reverse voltage v rwm absolute maximum ratings parameter symbol test conditions values units maximum average forward current per leg i f(av) 50 % duty cycle at t c = 138 c, rectan gular waveform 40 a per device 80 maximum peak one cycle non-repetitive surge current per leg i fsm 5 s sine or 3 s rect. pulse following any rated load condition and with rated v rrm applied 2200 10 ms sine or 6 ms rect. pulse 500 non-repetitive avalanche energy per leg e as t j = 25 c, i as = 6 a, l = 1.5 mh 27 mj repetitive avalanche current per leg i ar current decaying linearly to zero in 1 s frequency limited by t j maximum v a = 1.5 x v r typical 6a
vs-80cpq020pbf, vs-80CPQ020-N3 www.vishay.com vishay semiconductors revision: 31-aug-11 2 document number: 94256 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) pulse width < 300 s, duty cycle < 2 % electrical specifications parameter symbol test conditions values units maximum forward voltage drop per leg v fm (1) 40 a t j = 25 c 0.46 v 80 a 0.55 40 a t j = 125 c 0.36 80 a 0.46 40 a t j = 150 c 0.32 80 a 0.43 maximum reverse leakage current per leg i rm (1) t j = 125 c v r = 5 v 110 ma t j = 150 c v r = 10 v 600 t j = 25 c v r = rated v r 5.5 t j = 125 c 1100 threshold voltage v f(to) t j = t j maximum 0.185 v maximum junction capacitance per leg c t v r = 5 v dc (test signal range 100 khz to 1 mhz) 25 c 6500 pf typical series inductance per leg l s measured lead to lead 5 mm from package body 7.5 nh maximum voltage rate of change dv/dt rated v r 10 000 v/s thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage temperature range t j , t stg - 55 to 150 c maximum thermal resistance, junction to case per leg r thjc dc operation 0.6 c/w maximum thermal resistance, junction to case per package 0.3 typical thermal resistance, case to heatsink r thcs mounting surface, smooth and greased 0.25 approximate weight 6g 0.21 oz. mounting torque minimum 6 (5) kgf cm (lbf in) maximum 12 (10) marking device case style to-247ac (jedec) 80cpq020
vs-80cpq020pbf, vs-80CPQ020-N3 www.vishay.com vishay semiconductors revision: 31-aug-11 3 document number: 94256 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - maximum forward voltage drop characteristics (per leg) fig. 2 - typical values of reverse current vs. reverse voltage (per leg) fig. 3 - typical junction capacitance vs. reverse voltage (per leg) fig. 4 - maximum thermal impedance z thjc characteristics (per leg) 1 100 10 1000 i f - instantaneous forward current (a) v fm - forward voltage drop (v) 0.2 0.4 0.6 0.8 1.0 1.2 0 t j = 150 c t j = 125 c t j = 25 c 1 10 100 0.1 0.01 10 000 1000 i r - reverse current (ma) v r - reverse voltage (v) 16 20 4812 0 t j = 150 c t j = 125 c t j = 100 c t j = 75 c t j = 50 c t j = 25 c 1000 10 000 c t - junction capacitance (pf) v r - reverse voltage (v) 51015 25 20 0 t j = 25 c 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) 10 single p u lse (thermal resistance) d = 0.75 d = 0.50 d = 0.33 d = 0.25 d = 0.20 p dm t 1 t 2 n otes: 1. d u ty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c
vs-80cpq020pbf, vs-80CPQ020-N3 www.vishay.com vishay semiconductors revision: 31-aug-11 4 document number: 94256 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum allowable case temperature vs. average forward current (per leg) fig. 6 - forward power loss characteristics (per leg) fig. 7 - maximum non-repeti tive surge current (per leg) fig. 8 - unclamped inductive test circuit note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = 10 v 140 145 150 120 125 130 135 allowable case temperature (c) i f(av) - average forward current (a) 30 10 20 40 50 60 0 dc see note (1) square wave (d = 0.50) 10 v applied 0 15 20 10 5 25 average power loss (w) i f(av) - average forward current (a) 10 20 60 30 40 50 0 dc rms limit d = 0.20 d = 0.25 d = 0.33 d = 0.50 d = 0.75 100 10 000 1000 i fsm - non-repetitive surge current (a) t p - square wave pulse duration (s) 100 1000 10 000 10 at any rated load condition and with rated v rrm applied following surge c u rrent monitor high-speed s w itch d.u.t. r g = 25 + free w heel diode v d = 25 v l irfp460 40hfl40s02
vs-80cpq020pbf, vs-80CPQ020-N3 www.vishay.com vishay semiconductors revision: 31-aug-11 5 document number: 94256 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description vs-80cpq020pbf 25 500 antistatic plastic tube vs-80CPQ020-N3 25 500 antistatic plastic tube links to related documents dimensions www.vishay.com/doc?95223 part marking information to-247ac pbf www.vishay.com/doc?95226 to-247ac -n3 www.vishay.com/doc?95007 spice model www.vishay.com/doc?95289 - current rating (80 = 80 a) - circuit configuration: c = common cathode - package: p = to-247 - schottky ?q? series - voltage code (020 = 20 v) device code 6 2 4 3 5 7 80 c p q 020 pbf vs- 1 - vishay semiconductors product - pbf = lead (pb)-free and rohs compliant -n3 = halogen-free, rohs compliant, and totally lead (pb)-free environmental digit 2 3 4 5 6 7 1
outline dimensions www.vishay.com vishay semiconductors revision: 16-jun-11 1 document number: 95223 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dimensions in millimeters and inches notes (1) dimensioning and tolera ncing per asme y14.5m-1994 (2) contour of slot optional (3) dimension d and e do not include mold flas h. mold flash shall not exceed 0.127 mm (0 .005") per side. these dimensions are measu red at the outermost extremes of the plastic body (4) thermal pad contour optional with dimensions d1 and e1 (5) lead finish uncontrolled in l1 (6) ? p to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) outline conforms to jede c outline to-247 with ex ception of dimension c symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.65 5.31 0.183 0.209 d2 0.51 1.30 0.020 0.051 a1 2.21 2.59 0.087 0.102 e 15.29 15.87 0.602 0.625 3 a2 1.50 2.49 0.059 0.098 e1 13.72 - 0.540 - b 0.99 1.40 0.039 0.055 e 5.46 bsc 0.215 bsc b1 0.99 1.35 0.039 0.053 fk 2.54 0.010 b2 1.65 2.39 0.065 0.094 l 14.20 16.10 0.559 0.634 b3 1.65 2.37 0.065 0.094 l1 3.71 4.29 0.146 0.169 b4 2.59 3.43 0.102 0.135 n 7.62 bsc 0.3 b5 2.59 3.38 0.102 0.133 ? p 3.56 3.66 0.14 0.144 c 0.38 0.86 0.015 0.034 ? p1 - 6.98 - 0.275 c1 0.38 0.76 0.015 0.030 q 5.31 5.69 0.209 0.224 d 19.71 20.70 0.776 0.815 3 r 4.52 5.49 1.78 0.216 d1 13.08 - 0.515 - 4 s 5.51 bsc 0.217 bsc 0.10 a c m m e n (2) (3) (4) (4) (2) r/2 b 2 x r s d see view b 2 x e b4 3 x b 2 x b2 l c (5) l1 1 2 3 q d a a2 a a a1 c ? k b d m m a (6) ? p (datum b) fp1 d1 (4) 4 e1 0.01 b d m m view a - a thermal pad d2 dde e c c view b (b1, b3, b5) base metal c1 (b, b2, b4) section c - c, d - d, e - e (c) planting lead assignments diodes 1. - anode/open 2. - cathode 3. - anode
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